052-6414 rev b 5-2014 APT45GR65B_s symbol parameter ratings unit v ces collector emitter voltage 650 v v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 118 a i c2 continuous collector current @ t c = 110c 56 i cm pulsed collector current 1 224 scwt short circuit withstand time: v ce = 325v, v ge = 15v, t c =125c 10 s p d total power dissipation @ t c = 25c 543 w t j ,t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics APT45GR65B apt45gr65s 650v, 45a, v ce(on) = 1.9v typical microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 250ua) 650 volts v ge(th) gate threshold voltage (v ce = v ge , i c = 1.0ma, t j = 25c) 3.5 5.0 6.5 v ce(on) collector-emitter on voltage (v ge = 15v, i c = 45a, t j = 25c) 1.9 2.4 collector-emitter on voltage (v ge = 15v, i c = 45a, t j = 125c) 2.4 collector-emitter on voltage (v ge = 15v, i c = 90a, t j = 25c) 2.6 i ces collector cut-off current (v ce = 650v, v ge = 0v, t j = 25c) 2 10 250 a collector cut-off current (v ce = 650v, v ge = 0v, t j = 125c) 2 100 i ges gate-emitter leakage current (v ge = 20v) 250 na ultra fast npt - igbt ? the ultra fast 650v npt-igbt ? family of products is the newest generation of igbts optimized for outstanding ruggedness and best trade-off between conduction and switching losses. features low saturation voltage low tail current rohs compliant short circuit withstand rated high frequency switching ultra low leakage current unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is recommended for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). t o - 2 4 7 g c e d 3 pa k g c e (s) (b) downloaded from: http:///
APT45GR65B_s 052-6414 rev b 5-2014 typical performance curves thermal and mechanical characteristics dynamic characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.23 c/w r ja junction to ambient thermal resistance 40 w t package weight 0.22 oz 6.2 g torque mounting torque (to-247 package), 4-40 or m3 screw 10 in-lbf 6.2 n ? m 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode. 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 2900 pf c oes output capacitance 548 c res reverse transfer capacitance 268 v gep gate to emitter plateau voltage gate charge v ge = 15v v ce = 325v i c = 45a 7.5 v q g 3 total gate charge 150 203 nc q ge gate-emitter charge 18 24 q gc gate- collector charge 74 100 t d(on) turn-on delay time inductive switching (25c) v cc = 433v v ge = 15v i c = 45a r g = 4.3 4 t j = +25c 15 ns t r current rise time 32 t d(off) turn-off delay time 100 t f current fall time 50 e on2 5 turn-on switching energy 900 1350 j e off 6 turn-off switching energy 580 870 t d(on) turn-on delay time inductive switching (125c) v cc = 433v v ge = 15v i c = 45a r g = 4.3 4 t j = +125c 15 ns t r current rise time 32 t d(off) turn-off delay time 123 t f current fall time 52 e on2 5 turn-on switching energy 925 1245 j e off 6 turn-off switching energy 800 1160 0 0.05 0.10 0.15 0.20 0.25 10 -4 10 -3 10 -2 0.1 1 10 -5 z jc , thermal impedance (c/w) 0.1 d = 0.9 0.5 single pulse rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.3 0.05 0.02 peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: downloaded from: http:///
052-6414 rev b 5-2014 APT45GR65B_s typical performance curves 0 20 40 60 80 100 120 140 160 ? 50 ? 25 0 25 50 75 100 125 150 0 1 2 3 4 -50 -25 0 25 50 75 100 125 1 2 3 4 8 10 12 14 16 18 0 50 100 150 200 0 2 4 6 8 10 12 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 22.5a i c = 45a i c = 90a i c = 45a i c = 90a 13v 15v t j = 25c t j = -55c v ge = 15v t j = - 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 3. saturation voltage characteristics i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 4. output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 6, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 7, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) t j , junction temperature (c) figure 5. on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 9. dc collector current vs case temperature i c , dc collector current (a) 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 6.5v 7v i c = 22.5a 8.0v 9.0v 7.5v 10v i c (a) figure 2. max frequency vs current (t case = 75c) t j = 150c 0 50 100 150 200 250 0 102030405060708090 frequency (khz) t j , junction temperature figure 8. breakdown voltage vs junction temperature bv ces , breakdown voltage (normalized) downloaded from: http:///
APT45GR65B_s 052-6414 rev b 5-2014 typical performance curves 0 2 4 6 8 10 12 14 16 18 0 20 40 60 80 100 120 140 160 180 i c = 45a t j = 25c v ce = 520v v ce = 325v v ce = 130v gate charge (nc) figure 11. gate charge v ge , gate-to-emitter voltage (v) 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 10 100 1000 0 20 40 60 80 100 0 400 800 1200 1600 2000 0 25 50 75 100 125 0 400 800 1200 1600 2000 0 10 20 30 40 50 0 500 1000 1500 2000 2500 3000 3500 0 20 40 60 80 100 v ce = 433v, v ge =15v, r g = 4.3 t j = 25c or 125c t d(on) i ce , collector-to-emitter current (a) figure 12. turn-on time vs collector current switching time (ns) i ce , collector-to-emitter current (a) figure 13. turn-off time vs collector current switching time (ns) r g , gate resistance ( ) figure 15. energy loss vs gate resistance i ce , collector-to-emitter current (a) figure 14. energy loss vs collector current switching energy loss ( j) t j , junction temperature (c) figure 16. swiitching energy vs junction temperature switching energy losses ( j) t r t d(off) t f v ce = 433v, v ge =15v, r g = 4.3 t j = 25c t j = 125c v ce = 433v, v ge =15v, r g = 4.3 t j = 25c t j = 125c e on2 e off e on2 e off v ce = 433v, v ge =15v, i c = 45a t j = 125c switching energy loss ( j) e off e on2 v ce = 433v, v ge =15v, r g = 4.3 i c = 45a 1.0e ? 11 1.0e ? 10 1.0e ? 9 1.0e ? 8 0 10 20 30 40 50 c oes c res c ies v ce , collector-to-emitter voltage (volts) figure 10. capacitance vs collector-to-emitter voltage c, capacitance (f) 0.1 1 10 100 1000 11 0 100 1000 v ce , collector-to-emitter voltage figure 17. minimum switching safe operating area i c , collector current (a) 1ms 0.1ms 10ms dc and 100ms 0.01ms downloaded from: http:///
052-6414 rev b 5-2014 APT45GR65B_s 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches ) 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (collector)and leads are plated 3.81 (.150)4.06 (.160) (base of lead ) collector(heat sink) 1.98 (.078)2.08 (.082) gate collector emitter 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 e3 : 100% sn plating to-247 package outline d 3 pak package outline downloaded from: http:///
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